Работы, цитирующие эту работу

Работ: 3

Работа: Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

1. Silicon with binary elementary cells as a novel class of materials for future photoenergetics

   М. К. Бахадырханов, A. Sh. Mavlyanov, U. Kh. Sodikov +1

   СтатьяSemiconductor materials and interfacesApplied Solar Energy2015Цитирований: 13

   ABIABI:AkademIndex/openalex/2026.other.067974

2. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

   S. B. Donaev, V N Karimova, A T Azimov +2

   СтатьяNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science2020Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.452998

3. Influence of Various Impacts on the Composition and Structure of the Surface of Single-Crystal Si

   Б. Е. Умирзаков, I. R. Bekpulatov, Z. A. Tursunmetova

   СтатьяMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.558588