Работы, цитирующие эту работу

Работ: 3

Работа: Surfactant-mediated growth of Si 1-x Sn x layers by molecular-beam epitaxy

1. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

   А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +2

   СтатьяAdvanced Surface Polishing TechniquesPhysics of the Solid State2013Цитирований: 8

   ABIABI:AkademIndex/openalex/2013.article.000105

2. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

   А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

   СтатьяPhotonic and Optical DevicesSemiconductors2012Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.506192

3. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

   А. С. Саидов, Sh. N. Usmonov, М. С. Саидов

   СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2015Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.373288