Работы, цитирующие эту работу

Работ: 2

Работа: Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughness

1. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

   A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics2017Цитирований: 4

   ABIABI:AkademIndex/openalex/2017.article.000161

2. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

   A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

   СтатьяAdvancements in Semiconductor Devices and Circuit Design2014Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.386764