Работы, цитирующие эту работу

Работ: 4

Работа: Investigation of parameters of Schottky diodes based on chromium silicides

1. Study of the Mobility and Electrical Conductivity of Chromium Silicide

   M. Sh. Isaev, Tokhirjon U. Atamirzaev, Mukhammadsodik N. Mamatkulov +2

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2023Цитирований: 3

   ABIABI:AkademIndex/openalex/2023.article.001424

2. Research of Surface and Near – Surface Region Diffusion Doped Silicon by Manganese

   Makhmudhodzha Isaev, Abdumalik Gaibov, Abdigani Eshkulov +2

   ГлаваSemiconductor materials and interfacesLecture notes in networks and systems2022Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.551198

3. Study of infrared quenching in silicide-silicon-silicide structures

   A. T. Mamadalimov, Makhmudhodzha Isaev

   СтатьяSemiconductor materials and interfacesAdvanced Physical Research2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.002817

4. Study of the Thermoelectric Properties of Chrome Silicides

   A. T. Mamadalimov, Makhmudkhodja Sh. Isaev, Ismoil T. Bozarov +2

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.004256