Работы, цитирующие эту работу

Работ: 2

Работа: Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties

1. STUDYING THE INFLUENCE OF PROTON IRRADIATION ON THE DISTRIBUTION PROFILE OF Pt AND Cr IN SURFACE LAYERS n-Si˂Pt˃, n-Si˂Сr˃ USING ELLIPSOMETRIC SPECTROSCOPY

   Sharifa B. Utamuradova

   СтатьяAdvanced Materials Characterization TechniquesAdvanced Physical Research2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.001560

2. Structural Features of Silicon with Tin Impurity

   Sharifa B. Utamuradova, Bakhodir B. Bokiyev, D. S. Pulatova

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.003699