Special features of formation of high-performance semiconductor detectors based on αSi-Si(Li) heterostructures
Р. А. МуминовPhysicotechnical Institute, NPO Physics-Sun, Academy of Sciences of the Republic of Uzbekistan, ul. Bodomzor iuli 2B, Tashkent, 10008, UzbekistanAhmet SaymbetovPhysicotechnical Institute, NPO Physics-Sun, Academy of Sciences of the Republic of Uzbekistan, ul. Bodomzor iuli 2B, Tashkent, 10008, UzbekistanYo. K. ToshmurodovPhysicotechnical Institute, NPO Physics-Sun, Academy of Sciences of the Republic of Uzbekistan, ul. Bodomzor iuli 2B, Tashkent, 10008, Uzbekistan
ABI
Аннотация
A production technology of nuclear radiation detectors based on αSi-Si(Li) heterostructures is considered. It is shown that these detectors are more efficient as compared to traditional p-n structures due to a thin near-surface (“dead”) layer.
Перевод пока недоступен