Работы, цитирующие эту работу

Работ: 2

Работа: Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy

1. Influence of Microwave and Magnetic Fields on the Electrophysical Parameters of a Tunnel Diode

   Paul R. Berger, G. Gulyamov, М. Г. Дадамирзаев +2

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignRomanian Journal of Physics2024Цитирований: 4

   ABIABI:AkademIndex/openalex/2024.article.001662

2. Comprehensive Numerical Modeling of Silicon Tunnel Junction for Application in Multijunction Monolithic Solar Cells

   A. É. Atamuratov, B. Q. Jumaboev, M. M. Khalilloev +3

   ПрепринтSemiconductor Quantum Structures and DevicesResearch Square2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.preprint.000275