Статья

A surface‐ionization method of detection of a neutral component of indium sputtering under bombardment by cluster ions

С. Н. МорозовArifov Institute of Electronics 100125 Tashkent UzbekistanУ. Х. РасулевArifov Institute of Electronics 100125 Tashkent Uzbekistan

Surface and Interface Analysisjournal2012en

ABI

Аннотация

A surface‐ionization method of measuring the total sputtering yield has been developed. The indium sputtering by Bi m + ( m = 1–7) cluster ions with energy 2–10 keV has been studied. A non‐additive increase in the total sputtering yield with the raise in the number of atoms in cluster projectiles has been found. Copyright © 2012 John Wiley & Sons, Ltd.

Темы

Ion-surface interactions and analysis Mass Spectrometry Techniques and Applications Diamond and Carbon-based Materials Research

Идентификаторы

DOI: 10.1002/sia.4911

Цитирования и источники

Цитирований: 1 Использованных источников: 10

Показатели — AkademScholar · Скоро