Статья

Secondary ion emission from a GaAs single crystal upon bombardment with Bi+ m cluster ions

С. Н. МорозовInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, 100125, UzbekistanУ. Х. РасулевInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, 100125, Uzbekistan

Bulletin of the Russian Academy of Sciences Physicsjournal2016en

ABI

Аннотация

Secondary-ion mass spectra and energy distributions upon bombarding a gallium arsenide single crystal using Bi + (m = 1–5) cluster ions with energies of 2–12 keV are investigated. The gallium cluster ion yield grew nonadditively with the number of atoms in the cluster projectiles. A quasi-thermal component found in the energy spectra of secondary Ga+ and Ga 2 + ions is indicative of the occurrence of the thermal spike mode upon cluster ion bombardment. The quasi-thermal component in the yield of atomic Ga+ ions upon bombardment with Bi 2 + –Bi 5 + –ions is 35–75%.

Темы

Ion-surface interactions and analysis Diamond and Carbon-based Materials Research Laser-induced spectroscopy and plasma

Идентификаторы

DOI: 10.3103/s1062873816020210

Цитирования и источники

Цитирований: 2 Использованных источников: 13

Показатели — AkademScholar · Скоро