Influence of GaAs molecules on the photosensitivity of pSi–n(GaSb)1–x (Si2) x and nGaAs–p(InSb)1–x (Sn2) x heterostructures
Sh. N. UsmonovPhysical–Technical Institute, Scientific Association “Physics–Sun”, Academy of Sciences of Uzbekistan, Tashkent, 100084, Uzbekistan
ABI
Аннотация
The spectral dependences of heterostructures pSi–n(GaSb)1–x (Si2) x (0 ≤ х ≤ 0.07) and nGaAs–p(InSb)1–x (Sn2)x (0 ≤ х ≤ 0.05) alloyed by GaAs molecules are studied. The ionization energy of GaAs molecules in the studied structures is assessed and its dependence on the width of the band gap and parameter of the lattice of the basic semiconductor are found.
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