Studies of Degradation Silicon Heterojunction Solar Cells by 1 MeV Electrons Irradiation
V. S. KalinovskiĭIoffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaE. I. TerukovIoffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaС. Н. АболмасовIoffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaK. K. PrudchenkoIoffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaE. V. KontroshIoffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaI. A. TolkachevIoffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaА. В. КочергинR&D Center of Thin Film Technologies in Energetics, 194021, St. Petersburg, RussiaA. S. TitovIoffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaO. K. AtaboevNukus Branch of Tashkent University of Information Technologies named after Muhammad al-Khwarizmi, 230100, Nukus, Uzbekistan
ABI
Аннотация
This article attempts to assess the radiation resistance of heterostructure silicon solar cells to the effects of 1 MeV electrons and discusses their prospects for power supply of the global low-orbit satellite communication system. The data obtained from this study allow us to identify the most promising types of heterostructure silicon solar cells for use in low-orbit spacecraft. These are n-α-Si:H-(p)c-Si:Ga-p-α-Si:H and n-µc-Si:H-(p)c-Si:Ga-p-α-Si:H solar cells. The degradation in efficiency of these structures was less than 30% by 1 × 1015 cm–2 fluence of 1 MeV electrons.
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