Analysis of the Dependence of the Maximum Power of Silicon Heterojunction Solar Cells on the Parameters of the Crystalline Substrate
А. В. КочергинIoffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaI. E. PanaĭottiIoffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaE. I. TerukovIoffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaO. K. AtaboevNukus Mining Institute at Navoi State Mining and Technological University, 23010, Nukus, Uzbekistan
ABI
Аннотация
A new method for calculating the maximum power of silicon heterojunction thin-film solar cells with crystalline substrates is proposed. The developed analytical model makes it possible, with sufficient accuracy for practical purposes, to calculate the allowable variations in the concentration of a donor impurity and the lifetime of charge carriers in a crystalline silicon wafer, which provide the specified values of operating characteristics. The relevance of the results is substantiated by the possibility of their use in research projects aimed at finding the optimal parameters of substrates for photovoltaic converters.
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