Работы, цитирующие эту работу

Работ: 3

Работа: Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

1. Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions

   Б. Е. Умирзаков, I. R. Bekpulatov, Gunel Imanova +2

   СтатьяIon-surface interactions and analysisEurasian journal of physics and functional materials2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.267071

2. Influence of Various Impacts on the Composition and Structure of the Surface of Single-Crystal Si

   Б. Е. Умирзаков, I. R. Bekpulatov, Z. A. Tursunmetova

   СтатьяMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.558588

3. Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

   S. B. Donaev, Ganjimurod Shirinov, Б. Е. Умирзаков +2

   СтатьяIon-surface interactions and analysisCoatings2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.002442