Работы, цитирующие эту работу

Работ: 3

Работа: GaAs, AlAs, and Al<i>x</i>Ga1−<i>x</i>As: Material parameters for use in research and device applications

1. Influence of gamma doses on the optical and electrical properties of oxygen-impurity and chromium-doped GaAs

   M. Yu. Tashmetov, Abror Abdaminov

   СтатьяSemiconductor Quantum Structures and DevicesJournal of Physics Condensed Matter2025Цитирований: 1

   ABIABI:AkademIndex/openalex/2025.article.002520

2. Energy Levels of Nanodots Inside Semiconductor Nanowires

   A. B. Davlatov, G. Gulyamov, Doston Urinboev

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignBrazilian Journal of Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.331838

3. GaAs/AlGaAs Mid-Infrared Quantum Cascade Laser with Substrate-Leaking Mode

   А. А. Дубинов, V. I. Gavrilenko

   СтатьяSpectroscopy and Laser ApplicationsPhysics of Wave Phenomena2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009478