Работы, цитирующие эту работу

Работ: 2

Работа: Si/SiGe heterostructures: from material and physics to devices and circuits

1. Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures

   А. В. Новиков, Artem N. Yablonskiy, V. V. Platonov +3

   СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2010Цитирований: 0

   ABIABI:AkademIndex/openalex/2010.article.000110

2. Three-dimensional modeling of the relationship between static tunneling and the optical absorption coefficient in tunnel diodes

   M.K UKTAMOVA, Sh. Mamadaliev

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignResults in Optics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.011015