Работы, цитирующие эту работу

Работ: 2

Работа: High-power InGaN/GaN double-heterostructure violet light emitting diodes

1. Apparatus for growing GaN films on large-area substrates by the method of chloride-hydride vapor-phase epitaxy

   С. И. Степанов, D. Tsvetkov, A. E. Cherenkov

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000248

2. Influence of annealing conditions on the structure and luminescence properties of KGd_1−xEu_x(MoO₄)₂ (0 ≤ <i>x</i> ≤ 1)

   Vladimir A. Morozov, Svetlana M. Posokhova, Dina V. Deyneko +7

   СтатьяLuminescence Properties of Advanced MaterialsCrystEngComm2019Цитирований: 0

   ABIABI:AkademIndex/openalex/2019.article.000363