Работы, цитирующие эту работу

Работ: 2

1. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

   I. G. Atabaev, Kh. N. Juraev

   СтатьяSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering2018Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.390749

2. Develop an on-load Automatic Voltage Regulation System utilizing TRIACs for Power Transformers in the 6-10 kV range

   Kobilov Mirodil, Begmatova Mukhlisakhon, Ulmasov Jasur +2

   СтатьяElectric Power Systems and Control2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.011317