Работы, цитирующие эту работу

Работ: 4

Работа: The thermoelectric effect in a graded-gap nSi–pSi1–x Ge x heterostructure

1. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

   А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

   СтатьяPhase-change materials and chalcogenidesApplied Solar Energy2019Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.278129

2. Thermoelectric effect in the graded band gap Si1–x Ge x (0.2 ≤ x ≤ 1), Si1–x Ge x (0.5 ≤ x ≤ 1) solid solutions dependent on the gap difference

   A. Yu. Leĭderman, А. С. Саидов, A. B. Karshiev

   СтатьяMaterial Science and ThermodynamicsApplied Solar Energy2017Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.499309

3. The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

   Habibjon Kushiev, B. O. Isakov, U. X. Mukhammadjonov

   СтатьяMaterial Properties and ApplicationsJournal of Nano- and Electronic Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.003016

4. Investigation of the Features of the Thermovoltaic Effect in GaSb, GaAs and GaP Binary Compounds

   А. С. Саидов, Sh. N. Usmonov, O. Z. Turgunov

   СтатьяSemiconductor materials and interfacesApplied Solar Energy2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.012611