Peculiarities of solar elements based on narrow-band-gap semiconductors

Ideas concerning the development of solar elements with structures consisting of a p-n junction on a narrow-band-gap semiconductor and a cascade of frontal p-p heterojunctions on wide-band-gap semi-conductors, as well as the possibility of multiple generation of electron-hole pairs as the result of acceleration of photoelectrons in the fields of p-p heterojunctions, are proposed. The approximate evaluation of the efficiency of these solar elements shows that they can be more effective than silicon solar elements.

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