Работы, на которые ссылается эта работа

Работ: 9

Работа: Peculiarities of solar elements based on narrow-band-gap semiconductors

Physics of Semiconductor Devices
J.-P. Colinge, Cindy Colinge
Книга2002Цитирований: 58
ABI
Efficiency improvements of silicon solar cells by the impurity photovoltaic effect
Mark Keevers, Martin A. Green
Статья1994Цитирований: 22
ABI
Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
A. Ĺuque, Antonio Martı́
Статья1997Цитирований: 20
ABI
The impurity photovoltaic (IPV) effect in wide‐bandgap semiconductors: an opportunity for very‐high‐efficiency solar cells?
G. Beaucarne, Andrew S. Brown, Mark Keevers +2
Статья2002Цитирований: 15
ABI
Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy Conversion
J. J. Loferski
Статья1956Цитирований: 3
ABI
Japanese programs on novel concepts in PV
Masafumi Yamaguchi, Tatsuya Takamoto, Kenji Araki +1
Статья2004Цитирований: 3
ABI
Limitations and Possibilities for Improvement of Photovoltaic Solar Energy Converters: Part I: Considerations for Earth's Surface Operation
Martin Wolf
Статья1960Цитирований: 3
ABI
Possibilities of increasing the efficiency of Si and CuInSe2 solar cells
М. С. Саидов
Статья2011Цитирований: 2
ABI
Is it possible to carry out impact ionization in the narrow energy gap of p-p, n-n heterojunctions and increase the efficiency of thin-film solar cells?
М. С. Саидов
СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2011Цитирований: 2
ABI