Работы, цитирующие эту работу

Работ: 2

Работа: Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells

1. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

   А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

   СтатьяPhotonic and Optical DevicesSemiconductors2012Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.506192

2. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

   А. С. Саидов, Sh. N. Usmonov, М. С. Саидов

   СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2015Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.373288