Работы, цитирующие эту работу

Работ: 2

Работа: Angular dependence of the magnetoresistance effect in a silicon based p–n junction device

1. Changing the Voltage of the p-n Junction in a Magnetic Field

   G. Gulyamov, Feruza Mukhitdinova, Gulnoza Majidova

   СтатьяSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2023.article.002083

2. Influence of Temperature on Characteristics of a Diode with a p-n Junction in a Magnetic Field

   G. Gulyamov, Gulnoza Majidova, Saodat Madumarova +1

   СтатьяAdvanced Research in Systems and Signal Processinge-Journal of Surface Science and Nanotechnology2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.007435