Работы, цитирующие эту работу

Работ: 3

Работа: Electrophysical properties of Silicon doped by Nickel impurity using Diffusion method

1. Features of the Formation of Impurity-Defective Centers in Silicon Doped with Chromium

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Yuldoshali Ravshanov +30

   СтатьяSilicon and Solar Cell TechnologiesInternational Journal of Emerging Trends in Engineering Research2020Цитирований: 0

   ABIABI:AkademIndex/openalex/2020.article.005153

2. Analysis of Chromatic Dispersion on the Performance of a Standard Single Mode Fiber-Optics Communication Systems

   Barno Fayzullayeva, Jabbor Mukhammadiev

   СтатьяOptical Network Technologies2021 International Conference on Information Science and Communications Technologies (ICISCT)2021Цитирований: 0

   ABIABI:AkademIndex/openalex/2021.article.001298

3. Energy Spectrum and Charge Composition of Laser Plasma Ions

   Sayfillo Saidovich Nasriddinov, Z. T. Azamatov, Shuhratbek Ismoilov

   СтатьяLaser-Plasma Interactions and DiagnosticsJournal of Physics Conference Series2021Цитирований: 0

   ABIABI:AkademIndex/openalex/2021.article.006532