Работы, цитирующие эту работу

Работ: 2

Работа: GaAs Devices and Circuits

1. Three-junction Au/AlGaAs(n)/GaAs(p)/Ag photodiode

   A. V. Karimov, D. A. Karimova

   СтатьяSemiconductor materials and interfacesMaterials Science in Semiconductor Processing2003Цитирований: 5

   ABIABI:AkademIndex/openalex/2003.article.000100

2. Influence of the thickness of the base region of structures with a Schottky barrier on their current and photoelectric characteristics

   D. M. Edgorova

   СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2007Цитирований: 1

   ABIABI:AkademIndex/openalex/2007.article.000272