Работы, цитирующие эту работу

Работ: 2

Работа: Photovoltaic X-ray detectors based on epitaxial GaAs structures

1. Three-junction Au/AlGaAs(n)/GaAs(p)/Ag photodiode

   A. V. Karimov, D. A. Karimova

   СтатьяSemiconductor materials and interfacesMaterials Science in Semiconductor Processing2003Цитирований: 5

   ABIABI:AkademIndex/openalex/2003.article.000100

2. Functional possibilities of Ag-N 0AlGaAs-n +GaAs-n 0GaInAs-au structures with an isotype base region

   A. V. Karimov, D. M. Edgorova, F. A. Giyasova +1

   СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000339