Работы, цитирующие эту работу

Работ: 1

1. Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

   Kh. Kh. Boltaev, J. Sh. Sodikjanov, Д. А. Ташмухамедова +1

   СтатьяSemiconductor materials and devicesTechnical Physics2017Цитирований: 7

   ABIABI:AkademIndex/openalex/2017.article.000255