Работы, цитирующие эту работу

Работ: 6

Работа: Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors

1. Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

   A. S. Gazizulina, Aslan Nasirov, A. A. Nebesniy +2

   СтатьяZnO doping and propertiesSemiconductors2021Цитирований: 3

   ABIABI:AkademIndex/openalex/2021.article.001396

2. Optical characteristics of MBE grown GaMnAs embedded with MnAs clusters

   P. B. Parchinskiy, Fu Yu, Se Young Jeong +4

   СтатьяZnO doping and propertiesApplied Surface Science2006Цитирований: 2

   ABIABI:AkademIndex/openalex/2006.article.000138

3. Anisotropy of magnetoresistance in Be Co-doped GaMnAs

   P. B. Parchinskiy, Fucheng Yu, P. Sekar +1

   СтатьяZnO doping and propertiesJournal of Magnetism and Magnetic Materials2008Цитирований: 1

   ABIABI:AkademIndex/openalex/2008.article.000229

4. Transport properties in MnAs-precipitated GaMnAs layers

   P. B. Parchinskiy, Fu Yu, Cunxu Gao +4

   СтатьяZnO doping and propertiesJournal of Electroceramics2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000195

5. Influence of phase segregation process on transport properties of dilute magnetic semiconductors

   P. B. Parchinskiy, Fucheng Yu, Cunxu Gao +4

   СтатьяZnO doping and propertiesJournal of Magnetism and Magnetic Materials2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000235

6. Anisotropy of Carrier Transport Processes in GaMnAs Grown via Low Temperature Molecular Beam Epitaxy

   A. S. Gazizulina, Aslan Nasirov, P.B. Parchinskiy

   СтатьяZnO doping and properties2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.011234