Работы, цитирующие эту работу

Работ: 4

Работа: Metal–insulator transition and magnetotransport in III–V compound diluted magnetic semiconductors

1. Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

   A. S. Gazizulina, Aslan Nasirov, A. A. Nebesniy +2

   СтатьяZnO doping and propertiesSemiconductors2021Цитирований: 3

   ABIABI:AkademIndex/openalex/2021.article.001396

2. Anisotropy of magnetoresistance in Be Co-doped GaMnAs

   P. B. Parchinskiy, Fucheng Yu, P. Sekar +1

   СтатьяZnO doping and propertiesJournal of Magnetism and Magnetic Materials2008Цитирований: 1

   ABIABI:AkademIndex/openalex/2008.article.000229

3. Effect of Be codoping on the photoluminescence spectra of GaMnAs

   Fucheng Yu, P. B. Parchinskiy, Dojin Kim +3

   СтатьяZnO doping and propertiesCurrent Applied Physics2010Цитирований: 0

   ABIABI:AkademIndex/openalex/2010.article.000290

4. Effect of Be Co-Doping on Anisotropy of Magnetoresistance in GaMnAs Epitaxial Layers

   P. B. Parchinskiy, A. S. Gazizulina, Aslan Nasirov

   СтатьяZnO doping and propertiesRussian Physics Journal2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.004831