Работы, цитирующие эту работу

Работ: 2

Работа: Effects of film thickness and annealing on the magnetic properties of GaMnAsP ferromagnetic semiconductor

1. Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

   A. S. Gazizulina, Aslan Nasirov, A. A. Nebesniy +2

   СтатьяZnO doping and propertiesSemiconductors2021Цитирований: 3

   ABIABI:AkademIndex/openalex/2021.article.001396

2. Effect of Be Co-Doping on Anisotropy of Magnetoresistance in GaMnAs Epitaxial Layers

   P. B. Parchinskiy, A. S. Gazizulina, Aslan Nasirov

   СтатьяZnO doping and propertiesRussian Physics Journal2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.004831