Работы, цитирующие эту работу

Работ: 2

Работа: Semiconductor devices

1. Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor

   С. И. Власов

   СтатьяAdvanced Materials and Semiconductor TechnologiesSemiconductor Physics Quantum Electronics & Optoelectronics2010Цитирований: 2

   ABIABI:AkademIndex/openalex/2010.article.000171

2. Specialities of optical FET with tin-doped junction channel

   D. M. Yodgorova

   СтатьяPhotonic and Optical DevicesRadioelectronics and Communications Systems2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000384