Работы, цитирующие эту работу

Работ: 2

Работа: Current Understanding of the Fundamental Mechanisms of Doped and Loaded Semiconducting Metal-Oxide-Based Gas Sensing Materials

1. Mechanisms of Current Transition in High Compensated Silicon Samples with Zinc Nanoclusters

   Э. У. Арзикулов, M. Radzhabova, Sh. J. Quvondiqov +1

   СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2023.article.002686

2. Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K

   Э. У. Арзикулов, M. Radzhabova, Xuemin Cui +6

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.010089