Работы, цитирующие эту работу

Работ: 2

Работа: Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications

1. Electron eigenvalues in quantum well of AlAs/InxGa1−xAs/AlAs heterostructures with InAs nanoinserts

   Paziljon Baymatov, Bakhrom Abdulazizov, Makhmudjon Tokhirjonov

   СтатьяSemiconductor Quantum Structures and DevicesThe European Physical Journal B2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.559418

2. Numerical calculation of the probability of an electronic transition in a two-barrier heterostructure by a thin nanolayer

   Paziljon Baymatov, Bakhrom Abdulazizov, Makhmudjon Tokhirjonov

   СтатьяSurface and Thin Film PhenomenaThe European Physical Journal B2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.002942