Работы, цитирующие эту работу

Работ: 2

Работа: Radiation Resistance of Silicon Carbide Schottky Diode Detectors in D-T Fusion Neutron Detection

1. SiC plasma characterization produced by 3 ns pulse laser at 10 ¹⁰ W/cm ² intensity

   L. Torrisi, A. Torrisi, M. Cutroneo

   СтатьяSilicon Carbide Semiconductor TechnologiesRadiation effects and defects in solids2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.003009

2. In Situ Mapping of Space Charge Region Activation Dynamics in SiC/Si-Based Heterostructures by KPFM/STS: Role of Interface State Recharging

   M. V. Dolgopolov, N. A. Ivliev, V. V. Radenko +3

   СтатьяSilicon Carbide Semiconductor TechnologiesPhysics of Particles and Nuclei Letters2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.011837