Работы, на которые ссылается эта работа

Работ: 5

Работа: Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

1. Charge storage in a nitride-oxide-silicon medium by scanning capacitance microscopy

   R. C. Barrett, C. F. Quate

   Статья1991Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.568586

2. Rotating MNOS disk memory device

   Soichi Iwamura, Yuichiro Nishida, K. Hashimoto

   Статья1981Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.568591

3. Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET

   A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

   СтатьяSemiconductor materials and devicesDoklady Physics2010Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.612723

4. Read/write mechanisms and data storage system using atomic force microscopy and MEMS technology

   Hyunjung Shin, Seungbum Hong, Jooho Moon +1

   Статья2002Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.612724

5. Electrostatic force microscopy: principles and some applications to semiconductors

   Paul Girard

   Статья2001Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.612725