Работы, цитирующие эту работу

Работ: 5

Работа: Negative-U Properties for Point Defects in Silicon

1. A new semiempirical electronic structure and total energy calculation method for solids and large molecules

   Z. M. Khakimov

   СтатьяAdvanced Chemical Physics StudiesComputational Materials Science1994Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.602912

2. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   СтатьяThin-Film Transistor TechnologiesMRS Proceedings1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000275

3. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   СтатьяSilicon and Solar Cell TechnologiesMRS Proceedings1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000320

4. Technology of Secondary Cast Polycrystalline Silicon and Its Application in the Production of Solar Cells

   A. L. Kadirov, B. M. Abdurakhmanov, Х. Б. Ашуров +1

   ГлаваDiverse Industrial Engineering TechnologiesEAI/Springer Innovations in Communication and Computing2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.chapter.000223

5. Influence of Neutron Irradiation on the Generation of Charge Carriers in Heated Silicon-Germanium Film Structures for Thermal Energy Converters

   B. M. Abdurakhmanov, M. M. Adilov, Sherzodbek Kuchkanov +10

   ПрепринтAdvanced Materials and Semiconductor TechnologiesPreprints.org2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.preprint.000068