Работы, цитирующие эту работу

Работ: 6

Работа: Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma Case

1. Statistics of Inter‐Impurity Recombination of Electrons and Holes in Semiconductors

   P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (b)1968Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.531304

2. On the theory of current–voltage characteristics of semiconductor diode structures with strong carrier accumulation

   A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1979Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.496738

3. Double injection of a strongly degenerate plasma. Volume controlled current regime

   S. A. Azimov, Sh. A. Gulamov, Yu. A. Katulevskii +1

   СтатьяPlasma Diagnostics and Applicationsphysica status solidi (a)1979Цитирований: 2

   ABIABI:AkademIndex/openalex/1979.article.000061

4. Influence of deep impurity levels on double injection in semiconductors

   P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman, F. Ya. Rabinovich

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1972Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.605836

5. The influence of carrier capture in deep traps on the small-signal characteristics of double-injection currents in semiconductors

   D. A. Aronov, E. P. Kotov, Ya. P. Kotov

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1975Цитирований: 0

   ABIABI:AkademIndex/openalex/1975.article.000063

6. Injection of degenerate electron-hole plasma

   Yu. A. Katulevskii

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1985Цитирований: 0

   ABIABI:AkademIndex/openalex/1985.article.000071