Работы, цитирующие эту работу

Работ: 2

Работа: Theory of grain boundary recombination and carrier transport in polycrystalline silicon under optical illumination

1. Temperature dependence of the electrical properties of polycrystalline silicon in the dark and in sunlight

   K. M. Doshchanov

   СтатьяThin-Film Transistor TechnologiesSemiconductors1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000100

2. Nonlinear and dynamic properties of charge transport in polycrystalline silicon under optical illumination

   K. M. Doshchanov

   СтатьяThin-Film Transistor TechnologiesSemiconductors2001Цитирований: 0

   ABIABI:AkademIndex/openalex/2001.article.000246