Micropipe evolution in silicon carbide
M. Yu. GutkinInstitute of Problems of Mechanical Engineering, RAS, Bolshoy 61, 199178 St. Petersburg, RussiaA. G. SheĭnermanInstitute of Problems of Mechanical Engineering, RAS, Bolshoy 61, 199178 St. Petersburg, RussiaT. S. ArgunovaIoffe Physico-Technical Institute, RAS, Polytekhnicheskaya st., 26, 194021 St. Petersburg, RussiaE. N. MokhovIoffe Physico-Technical Institute, RAS, Polytekhnicheskaya st., 26, 194021 St. Petersburg, RussiaJung Ho JeDepartment of Materials Science and Engineering, Pohang University of Science and Technology, San 31 Hyoja-dong, Namku, Pohang, 790-784, Republic of KoreaY. HwuInstitute of Physics, Academia Sinica, Nankang, Taipei, Taiwan, Republic of ChinaWen‐Li TsaiInstitute of Physics, Academia Sinica, Nankang, Taipei, Taiwan, Republic of ChinaG. MargaritondoInstitute de physique appliquée, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
2003en
ABI
Аннотация
Micropipe bundling and twisting in SiC crystals was revealed using synchrotron x-ray phase sensitive radiography. The computer simulation of micropipe evolution during the crystal growth suggests that the bundled and twisted micropipes arise under the influence of stress fields from other neighboring micropipes. The annihilation of twisted dipoles is attributed to their transformation into semiloops. Reactions of micropipe coalescence lead to the generation of micropipes and/or the annihilation of initial micropipes, resulting in the decrease in their average density.
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