Работы, цитирующие эту работу

Работ: 3

Работа: Fabrication of ultrathin impurity source to minimize radiation-induced losses in photosensitive films of CdS

1. Effect of Ion Bombardment on the Density of States of Valence Electrons in CdS Films

   Б. Е. Умирзаков, Д. А. Ташмухамедова, Eshboy Rabbimov +2

   СтатьяChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2019Цитирований: 3

   ABIABI:AkademIndex/openalex/2019.article.000688

2. Fabrication of Cd–Ba–S Nanoscale Structures on the Surface and in the Near-Surface Region of CdS Films by Implantation with Ba+ Ions

   J. Sh. Sodikjanov, Б. Е. Умирзаков

   СтатьяQuantum Dots Synthesis And PropertiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 1

   ABIABI:AkademIndex/openalex/2021.article.002814

3. Study of the Composition of Uncontrolled Impurities and the Profiles of Their Distribution at the Ni–CdS Interface

   A. A. Abduvayitov, Kh. Kh. Boltaev, G. A. Rozikov

   СтатьяChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.008003