Работы, цитирующие эту работу

Работ: 3

Работа: A new mechanism for interstistitial migration

1. The low-temperature doping of silicon by radiation-induced diffusion

   A. I. Koifman, A. N. Narkulov, Б. Л. Оксенгендлер +1

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1976Цитирований: 0

   ABIABI:AkademIndex/openalex/1976.article.000045

2. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   СтатьяThin-Film Transistor TechnologiesMRS Proceedings1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000275

3. Periodic Landau-Zener problem in long-range migration

   Б. Л. Оксенгендлер, N. N. Turaeva

   СтатьяElectron and X-Ray Spectroscopy TechniquesJournal of Experimental and Theoretical Physics2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000228