Работы, цитирующие эту работу

Работ: 3

Работа: Si dangling-bond-type defects at the interface of (100)Si with ultrathin layers of SiOx, Al2O3, and ZrO2

1. The surface conductivity of gamma-irradiated ceramic dielectrics

   M. I. Muminov, V. N. Sandalov

   СтатьяSemiconductor materials and devicesTechnical Physics Letters2003Цитирований: 0

   ABIABI:AkademIndex/openalex/2003.article.000314

2. Effect of Gamma Irradiation on the Electrical Properties of Vitreous SiO2

   I. Kh. Abdukadyrova

   СтатьяSemiconductor materials and devicesInorganic Materials2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000299

3. Effect of neutron irradiation on the structure and optical properties of fused SiO2

   I. Kh. Abdukadyrova

   СтатьяGlass properties and applicationsInorganic Materials2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000241