Работы, цитирующие эту работу

Работ: 2

Работа: Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and Dose

1. Energy dependence of silicon amorphization during ion implantation-part I

   U. Yarkulov

   СтатьяSilicon and Solar Cell TechnologiesRadiation Effects1986Цитирований: 0

   ABIABI:AkademIndex/openalex/1986.article.000074

2. Electronic theory of irradiation-induced disoerdering and annealing in semiconductors

   A. T. Mamadalimov, Б. Л. Оксенгендлер, N. N. Turaeva

   СтатьяSemiconductor Quantum Structures and DevicesRussian Physics Journal2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000236