Работы, цитирующие эту работу

Работ: 2

Работа: Thermal emission and capture of electrons at sulfur centers in silicon

1. Influence of the Post-Diffusion Hardening Rate and Thermal Treatment on the Thermal Stability of the Charge-Carrier Lifetime in Overcompensated n-Si<B, S>

   M. Kаrimov, A. K. Karakhodzhaev

   СтатьяSemiconductor materials and interfacesRussian Physics Journal2001Цитирований: 0

   ABIABI:AkademIndex/openalex/2001.article.000182

2. Method of Increasing Photosensitivity of Silicon Power Planes for Solar Energy

   Sh. I. Askarov, B. Z. Sharipov, Sh. K. Saliyeva +1

   СтатьяSolid-state spectroscopy and crystallographyApplied Solar Energy2018Цитирований: 0

   ABIABI:AkademIndex/openalex/2018.article.000969