Работы, цитирующие эту работу

Работ: 3

Работа: Generation of thermal donors in silicon: Effect of self-interstitials

1. Electrical Properties of Silicon Doped with Manganese via High-Temperature Diffusion

   M. K. Bakhadirkhanov, Х. М. Илиев, M. O. Tursunov +3

   СтатьяSilicon Nanostructures and PhotoluminescenceInorganic Materials2021Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.419058

2. Formation of Defects and Clusters on the Surface of Crystals Si(111) And SiOx at Irradiation by Electrons and Ions

   Utkirjon Sharopov

   ГлаваThin-Film Transistor TechnologiesSpringerBriefs in materials2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.chapter.000289

3. Investigation of the Influence of Nickel on the Behavior of Thermal Donors in Silicon

   B. K. Ismaylov, N. F. Zikrillayev, Kanatbay A. Ismailov +2

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009032