Exclusion effect quenching in compensated semiconductors under the action of impurity illumination generating majority current carriers

The effect of impurity illumination generating majority current carriers on the characteristics of exclusion currents in compensated semiconductors with deep traps and non-injecting contacts is examined theoretically. The distribution of carrier concentration and field in the base of the n+−n−n+ structure, the depletion region width and carrier concentration of both types near the contacts as functions of the illumination intensity, and the current-voltage characteristics are studied. A decrease of carrier exclusion under action of such illumination is found and the value of the illumination intensity at which the exclusion effect has completely ceased is determined. The possibility is shown of a considerable increase of photosensitivity to impurity illumination for the case of a large quenching of the exclusion effect. Qualitative agreement between theoretical and experimental results is shown for n-Ge 〈Sb, Cu〉 samples exactly compensated by copper. [Russian Text Ignored].

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