Работы, цитирующие эту работу

Работ: 2

Работа: Si/SiO2Structures with Quantum Size Effects: The Construction of a Low-Dimensional Nanoscale Electronic System in the Interface Layer of Si by Incorporating a Regularly Distributed Charge into SiO2

1. Tunable SiO2/Si-based nanostructures

   А. Н. Георгобиани, A. É. Atamuratov, U. A. Aminov +1

   СтатьяAdvanced Surface Polishing TechniquesInorganic Materials2009Цитирований: 0

   ABIABI:AkademIndex/openalex/2009.article.000389

2. Modelling of Quantum Wires in the Interface Layer of the Semiconductor-Oxide Structures with Charge Built in Oxide

   A. É. Atamuratov

   ГлаваSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics2009Цитирований: 0

   ABIABI:AkademIndex/openalex/2009.chapter.000024