Работы, цитирующие эту работу

Работ: 2

Работа: MOS (Metal Oxide Semiconductor) Physics and Technology

1. Tunable SiO2/Si-based nanostructures

   А. Н. Георгобиани, A. É. Atamuratov, U. A. Aminov +1

   СтатьяAdvanced Surface Polishing TechniquesInorganic Materials2009Цитирований: 0

   ABIABI:AkademIndex/openalex/2009.article.000389

2. Modelling of Quantum Wires in the Interface Layer of the Semiconductor-Oxide Structures with Charge Built in Oxide

   A. É. Atamuratov

   ГлаваSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics2009Цитирований: 0

   ABIABI:AkademIndex/openalex/2009.chapter.000024