Работы, цитирующие эту работу

Работ: 3

Работа: Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy

1. On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

   N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.007102

2. Formation of Barium Silicide Coatings by Vacuum Thermal Evaporation Methods

   Bakhrom Igаmоv, Aleksey Kamardin, I. R. Bekpulatov +3

   Статьяnanoparticles nucleation surface interactions2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.009014

3. On Si/NiSi2/Si(111) Heterostructures Obtained by Solid-Phase Deposition

   N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков +1

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.010336