Работы, цитирующие эту работу

Работ: 2

Работа: Determining the potential barrier presented by the interfacial layer from the temperature induced I–V characteristics in Al/p-Si Structure with native oxide layer

1. Lateral Photoelectric Effect In Iron-Silicon Dioxide-Compensated Silicon Hybrid Structures

   Э. У. Арзикулов, Alisher D. Nurimov, F. Salakhitdinov +4

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.012415

2. Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K

   Э. У. Арзикулов, M. Radzhabova, Xuemin Cui +6

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.010089