Работы, цитирующие эту работу

Работ: 2

Работа: New Phenomenon in Narrow Germanium<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi><mml:mo>−</mml:mo><mml:mi>n</mml:mi></mml:math>Junctions

1. Three-dimensional modeling of the relationship between static tunneling and the optical absorption coefficient in tunnel diodes

   M.K UKTAMOVA, Sh. Mamadaliev

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignResults in Optics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.011015

2. Comprehensive Numerical Modeling of Silicon Tunnel Junction for Application in Multijunction Monolithic Solar Cells

   A. É. Atamuratov, B. Q. Jumaboev, M. M. Khalilloev +3

   ПрепринтSemiconductor Quantum Structures and DevicesResearch Square2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.preprint.000275